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Now downloading free:Toshiba gt10j303 en wm 20061031

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Descr: . Electronic Components Datasheets Active components Transistors Toshiba gt10j303_en_wm_20061031.pdf
Group:Electronics > Components > Transistors
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GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 HIGH POWER SWITCHING APPLICATIONS Unit: mm MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30s (Max.) (IC = 10A) Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 10A) FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25

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